The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been\r\nintroduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across\r\nthe metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation of any semiconductor\r\ndevice. 4H-SiC is used as a semiconductor material for its good electrical characteristics with high-power semiconductor devices\r\napplications. Six physical parameters are considered during the optimization process, that is, device metal, mobile charge density,\r\nfixed oxide charge density, interface trapped charge density, oxide thickness, and voltage drop across the metal-semiconductor\r\ncontact. The optimization process was performed using a MATLAB program. The results show that the SBD barrier height has\r\nbeen optimized to achieve a maximum or minimum barrier height across the contact, in addition to the ability of controlling the\r\nphysical parameters to adjust the device barrier height.
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